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Trapped charge densities in Al2O3-based silicon surface passivation layers
Type:
Journal
Info:
Journal of Applied Physics 119, 215306 (2016)
Date:
2016-05-19
Author Information
| Name | Institution |
|---|---|
| Paul Matthias Jordan | NaMLab gGmbH |
| Daniel Kai Simon | NaMLab gGmbH |
| Thomas Mikolajick | NaMLab gGmbH |
| Ingo Dirnstorfer | NaMLab gGmbH |
Films
Thermal Al2O3
Thermal HfO2
Plasma SiO2
Film/Plasma Properties
Characteristic: Flat Band Voltage
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Fixed Charge
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Trapped Positive Charge-Density Change
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Minority Carrier Lifetime
Analysis: MDP, Microwave Detected Photoconductivity
Substrates
| Si(100) |
Notes
| 912 |