Publication Information

Title: Silicon surface passivation by ultrathin Al2O3 films and Al2O3/SiNx stacks

Type: Conference Proceedings

Info: 2010 35th IEEE Photovoltaic Specialists Conference (PVSC)

Date: 2010-06-20

DOI: http://dx.doi.org/10.1109/PVSC.2010.5614132

Author Information

Name

Institution

Institute for Solar Energy Research Hamelin (ISFH)

Institute for Solar Energy Research Hamelin (ISFH)

Institute for Solar Energy Research Hamelin (ISFH)

Institute for Solar Energy Research Hamelin (ISFH)

Institute for Solar Energy Research Hamelin (ISFH)

Films

Deposition Temperature Range = 200-260C

75-24-1

7782-44-7

Deposition Temperature Range = 200-260C

75-24-1

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Thickness

Ellipsometry

J.A. Woollam M-2000F

Passivation

Photoconductance

Sinton WCT-100

Minority Carrier Lifetime

Photoconductance

Sinton WCT-100

Surface Recombination Velocity

Photoconductance

Sinton WCT-100

Open Circuit Voltage

Custom

Unknown

Short Circuit Current

Custom

Unknown

Fill Factor

Custom

Unknown

Efficiency

Custom

Unknown

Substrates

Silicon

Keywords

Passivation

Notes

714

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