Surface passivation of phosphorus-diffused n+-type emitters by plasma-assisted atomic-layer deposited Al2O3

Type:
Journal
Info:
physica status solidi (RRL) - Rapid Research Letters Volume 6, Issue 1, pages 4--6, 2012
Date:
2011-10-10

Author Information

Name Institution
Bram HoexNational University Singapore
Mauritius C. M. (Richard) van de SandenEindhoven University of Technology
J. SchmidtInstitute for Solar Energy Research Hamelin (ISFH)
Rolf BrendelInstitute for Solar Energy Research Hamelin (ISFH)
Erwin (W.M.M.) KesselsEindhoven University of Technology

Films


Film/Plasma Properties

Characteristic: Passivation
Analysis: Photoconductance

Characteristic: Thickness
Analysis: Ellipsometry

Substrates

Silicon

Notes

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