Publication Information

Title: Irradiation effects of graphene-enhanced gallium nitride (GaN) metal-semiconductor-metal (MSM) ultraviolet photodetectors

Type: Conference Proceedings

Info: Proc. SPIE 9491, Sensors for Extreme Harsh Environments II, 949107

Date: 2015-04-20

DOI: http://dx.doi.org/10.1117/12.2178091

Author Information

Name

Institution

Stanford University

Stanford University

Stanford University

Stanford University

Stanford University

Films

Deposition Temperature Range N/A

15112-89-7

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Substrates

GaN

Keywords

Notes

497

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