Thermal and Plasma-Enhanced ALD of Ta and Ti Oxide Thin Films from Alkylamide Precursors
Type:
Journal
Info:
Electrochemical and Solid-State Letters, 9 (6) G191-G194 (2006)
Date:
2006-03-28
Author Information
Name | Institution |
---|---|
Wan Joo Maeng | Pohang University of Science and Technology (POSTECH) |
Hyungjun Kim | Pohang University of Science and Technology (POSTECH) |
Films
Plasma Ta2O5
Thermal Ta2O5
Plasma TiO2
Thermal TiO2
Film/Plasma Properties
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry
Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Substrates
Si(001) |
Notes
All substrates received HF dip. Substrates for electrical testing also received RCA clean. |
Nice plot of plasma and thermal Ta2O5 GPC vs temperature showing minima at 200-250C and higher GPC at lower and higher temperatures. |
79 |