Publication Information

Title: Capacitance and conductance versus voltage characterization of Al2O3 layers prepared by plasma enhanced atomic layer deposition at 25°C<T<200°C

Type: Journal

Info: J. Vac. Sci. Technol. A 32(1), Jan/Feb 2014, 01A107

Date: 2013-11-04

DOI: http://dx.doi.org/10.1116/1.4831897

Author Information

Name

Institution

Brandenburg University of Technology

Sentech Instruments GmbH

Sentech Instruments GmbH

Sentech Instruments GmbH

Brandenburg University of Technology

Brandenburg University of Technology

Films

Thermal Al2O3 using SENTECH

Deposition Temperature = 200C

75-24-1

7732-18-5

Plasma Al2O3 using SENTECH

Deposition Temperature Range = 27-200C

75-24-1

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Thickness

Ellipsometry

SENTECH SE 800

Negative Fixed Charge Density

C-V, Capacitance-Voltage Measurements

Agilent 4284A LCR Meter

Dielectric Constant, Permittivity

C-V, Capacitance-Voltage Measurements

Agilent 4284A LCR Meter

Interface State Density

I-V, Current-Voltage Measurements

Agilent 4284A LCR Meter

Substrates

Si(100)

Keywords

PEALD Film Development

Notes

Post deposition anneal

SE and XPS of same films in recent publication

11

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