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Growth characteristics and electrical properties of La2O3 gate oxides grown by thermal and plasma-enhanced atomic layer deposition
Type:
Journal
Info:
Thin Solid Films 519 (2010) 362 - 366
Date:
2010-07-26
Author Information
| Name | Institution |
|---|---|
| Woo-Hee Kim | Yonsei University |
| Wan Joo Maeng | Pohang University of Science and Technology (POSTECH) |
| Kyeong-Ju Moon | Yonsei University |
| Jae Min Myoung | Yonsei University |
| Hyungjun Kim | Yonsei University |
Films
Film/Plasma Properties
Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Bonding States
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Hysteresis
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: CET, capacitance equivalent thickness
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Characteristic: Thickness
Analysis: Ellipsometry
Substrates
| Si(001) |
Notes
| 705 |