Publication Information

Title: Growth characteristics and electrical properties of La2O3 gate oxides grown by thermal and plasma-enhanced atomic layer deposition

Type: Journal

Info: Thin Solid Films 519 (2010) 362 - 366

Date: 2010-07-26

DOI: http://dx.doi.org/10.1016/j.tsf.2010.07.108

Author Information

Name

Institution

Yonsei University

Pohang University of Science and Technology (POSTECH)

Yonsei University

Yonsei University

Yonsei University

Films

Plasma La2O3 using Custom

Deposition Temperature Range = 200-400C

68959-87-5

7782-44-7

Thermal La2O3 using Custom

Deposition Temperature Range = 200-400C

68959-87-5

7732-18-5

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Chemical Composition, Impurities

XPS, X-ray Photoelectron Spectroscopy

VG Scientific ESCALAB 220iXL

Bonding States

XPS, X-ray Photoelectron Spectroscopy

VG Scientific ESCALAB 220iXL

Hysteresis

C-V, Capacitance-Voltage Measurements

HP 4284A LCR

CET, capacitance equivalent thickness

C-V, Capacitance-Voltage Measurements

HP 4284A LCR

Interface Trap Density

C-V, Capacitance-Voltage Measurements

HP 4284A LCR

Leakage Current

I-V, Current-Voltage Measurements

Keithley 4200-SCS

Thickness

Ellipsometry

Rudolf AutoEL II

Substrates

Si(001)

Keywords

Plasma vs Thermal Comparison

Notes

705

Disclaimer

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