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Electrical Characterization of Metal-Insulator-Semiconductor Capacitors Having Double-Layered Atomic-Layer-Deposited Al2O3 and ZnO for Transparent Thin Film Transistor Applications
Type:
Journal
Info:
Journal of The Electrochemical Society, 157 (7) H727-H733 (2010)
Date:
2010-04-05
Author Information
| Name | Institution |
|---|---|
| Sung-Min Yoon | Electronics and Telecommunication Research Institute, (ETRI) |
| Sang-Hee Ko Park | Electronics and Telecommunication Research Institute, (ETRI) |
| Chun-Won Byun | Electronics and Telecommunication Research Institute, (ETRI) |
| Shin-Hyuk Yang | Electronics and Telecommunication Research Institute, (ETRI) |
| Chi Sun Hwang | Electronics and Telecommunication Research Institute, (ETRI) |
Films
Plasma ZnO
Thermal Al2O3
Thermal Al2O3
Plasma Al2O3
Film/Plasma Properties
Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Flat Band Voltage Shift
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Hysteresis
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Depletion Layer Width
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Substrates
| ITO |
| ZnO |
| Silicon |
Notes
| 723 |