PEALD AlN: controlling growth and film crystallinity

Type:
Conference Proceedings
Info:
physica status solidi (c) Volume 12, Issue 7, pages 1036--1042, 2015
Date:
2015-06-05

Author Information

Name Institution
Sourish BanerjeeUniversity of Twente
Antonius A. I. AarninkUniversity of Twente
Robbert van de KruijsUniversity of Twente
Alexey Y. KovalginUniversity of Twente
Jurriaan SchmitzUniversity of Twente

Films

Plasma AlN


Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: GIXRD, Grazing Incidence X-Ray Diffraction

Substrates

Si(111)
Si(100)
SiO2

Notes

511