Publication Information

Title: Properties of AlN grown by plasma enhanced atomic layer deposition

Type: Journal

Info: Applied Surface Science 257 (2011) 7827-7830

Date: 2011-04-05

DOI: http://dx.doi.org/10.1016/j.apsusc.2011.04.037

Author Information

Name

Institution

Aalto University

University of Jyväskylä

University of Jyväskylä

Aalto University

Beneq Oy

Aalto University

Aalto University

Films

Plasma AlN using Beneq TFS-500

Deposition Temperature Range = 100-300C

75-24-1

7664-41-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Chemical Composition, Impurities

TOF-ERDA, Time-Of-Flight Elastic Recoil Detection Analysis

Unknown

Refractive Index

Reflection Spectroscopy

FilmTek 2000

Extinction Coefficient

Reflection Spectroscopy

FilmTek 2000

Density

XRR, X-Ray Reflectivity

PANalytical Xpert PRO MRD X-ray Diffractometer

Morphology, Roughness, Topography

XRR, X-Ray Reflectivity

PANalytical Xpert PRO MRD X-ray Diffractometer

Thickness

XRR, X-Ray Reflectivity

PANalytical Xpert PRO MRD X-ray Diffractometer

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

XRD, X-Ray Diffraction

PANalytical Xpert PRO MRD X-ray Diffractometer

Thickness

Ellipsometry

Philips Plasmos SD 2300

Substrates

Keywords

PEALD Film Development

Notes

Beneq TFS-500 PEALD AlN development.

179

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