Publication Information

Title: PEALD of a Ruthenium Adhesion Layer for Copper Interconnects

Type: Journal

Info: Journal of The Electrochemical Society, 151(12) C753-C756 (2004)

Date: 2004-10-28

DOI: http://dx.doi.org/10.1149/1.1809576

Author Information

Name

Institution

Korea Advanced Institute of Science and Technology

Korea Advanced Institute of Science and Technology

Genitech Co., Ltd.

Korea Advanced Institute of Science and Technology

Films

Plasma Ru using Custom

Deposition Temperature Range N/A

32992-96-4

7664-41-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Thickness

SEM, Scanning Electron Microscopy

Unknown

Resistivity, Sheet Resistance

Four-point Probe

Unknown

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

XRD, X-Ray Diffraction

Unknown

Density

RBS, Rutherford Backscattering Spectrometry

Unknown

Adhesion

Scotch Tape Test

Unknown

Bonding States

XPS, X-ray Photoelectron Spectroscopy

Unknown

Substrates

TiN

Keywords

Copper Electroplating

Notes

Ru(EtCp)2 vapor pressure is 180mTorr at 80C.

Interesting combination of O2 thermal and H2 plasma experiment shows importance of adsorbed O on Ru growth during processing.

106

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