Publication Information

Title: GaAs surface passivation by plasma-enhanced atomic-layer-deposited aluminum nitride

Type: Journal

Info: Applied Surface Science 256 (2010) 7434-7437

Date: 2010-05-24

DOI: http://dx.doi.org/10.1016/j.apsusc.2010.05.085

Author Information

Name

Institution

Aalto University

Aalto University

Aalto University

Aalto University

Aalto University

Aalto University

Aalto University

Aalto University

Films

Plasma AlN using Beneq TFS-500

Deposition Temperature = 200C

75-24-1

7664-41-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Photoluminescence

PL, PhotoLuminescence

Custom

Thickness

XRR, X-Ray Reflectivity

Unknown

Density

XRR, X-Ray Reflectivity

Unknown

Chemical Composition, Impurities

EDS, EDX, Energy Dispersive X-ray Spectroscopy

LEO 1560 SEM/EDX

Substrates

InGaAs

GaAs

Silicon

Keywords

Passivation

Photoluminescence

Notes

Beneq TFS-500 PEALD AlN for GaAs surface passivation.

174

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