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GaAs surface passivation by plasma-enhanced atomic-layer-deposited aluminum nitride
Type:
Journal
Info:
Applied Surface Science 256 (2010) 7434-7437
Date:
2010-05-24
Author Information
| Name | Institution |
|---|---|
| Markus Bosund | Aalto University |
| Päivi Mattila | Aalto University |
| A. Aierken | Aalto University |
| T. Hakkarainen | Aalto University |
| H. Koskenvaara | Aalto University |
| M. Sopanen | Aalto University |
| Veli-Matti Airaksinen | Aalto University |
| Harri Lipsanen | Aalto University |
Films
Plasma AlN
Film/Plasma Properties
Characteristic: Photoluminescence
Analysis: PL, PhotoLuminescence
Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity
Characteristic: Density
Analysis: XRR, X-Ray Reflectivity
Characteristic: Chemical Composition, Impurities
Analysis: EDS, EDX, Energy Dispersive X-ray Spectroscopy
Substrates
| InGaAs |
| GaAs |
| Silicon |
Notes
| Beneq TFS-500 PEALD AlN for GaAs surface passivation. |
| 174 |