Publication Information

Title: Impact of Plasma-Assisted Atomic-Layer-Deposited Gate Dielectric on Graphene Transistors

Type: Journal

Info: IEEE Electron Device Letters, Vol. 32, No. 4, April 2011

Date: 2011-03-23

DOI: http://dx.doi.org/10.1109/LED.2011.2108258

Author Information

Name

Institution

U.S. Army Research Laboratory

U.S. Army Research Laboratory

U.S. Army Research Laboratory

Films

Deposition Temperature = 100C

75-24-1

7782-44-7

Deposition Temperature = 250C

75-24-1

7732-18-5

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Morphology, Roughness, Topography

AFM, Atomic Force Microscopy

Unknown

Conformality, Step Coverage

AFM, Atomic Force Microscopy

Unknown

Chemical Composition, Impurities

Raman Spectroscopy

Unknown

Chemical Binding

Raman Spectroscopy

Unknown

Thickness

Ellipsometry

Unknown

Thickness

C-V, Capacitance-Voltage Measurements

Unknown

Transfer Curves

I-V, Current-Voltage Measurements

Unknown

Transconductance

I-V, Current-Voltage Measurements

Unknown

Leakage Current

I-V, Current-Voltage Measurements

Unknown

Breakdown Voltage

I-V, Current-Voltage Measurements

Unknown

Mobility

I-V, Current-Voltage Measurements

Unknown

Substrates

Graphene

Silicon

Keywords

Graphene

Notes

100C PEALD samples were annealed at 250C prior to testing.

Plasma produces enough nucleation sites without damaging graphene substantially.

97

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