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Electronic and optical device applications of hollow cathode plasma assisted atomic layer deposition based GaN thin films
Type:
Journal
Info:
J. Vac. Sci. Technol. A 33(1), Jan/Feb 2015
Date:
2014-11-21
Author Information
| Name | Institution |
|---|---|
| S. Bolat | Bilkent University |
| Burak Tekcan | Bilkent University |
| Çağla Özgit | Bilkent University |
| Necmi Biyikli | Bilkent University |
| Ali Kemal Okyay | Bilkent University |
Films
Thermal Al2O3
Plasma GaN
Plasma GaN
Film/Plasma Properties
Characteristic: Resistivity, Sheet Resistance
Analysis: -
Characteristic: Contact Resistance
Analysis: -
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Transistor Characteristics
Analysis: -
Characteristic: Mobility
Analysis: -
Characteristic: Images
Analysis: SEM, Scanning Electron Microscopy
Substrates
| GaN |
| Al2O3 |
Notes
| Hollow-cathode plasma source. |
| Ultratech Fiji PEALD GaN study with various annealing and photodetector results. |
| 169 |