Publication Information

Title: Current transport mechanisms in plasma-enhanced atomic layer deposited AlN thin films

Type: Journal

Info: JOURNAL OF APPLIED PHYSICS 117, 155101 (2015)

Date: 2015-04-02

DOI: http://dx.doi.org/10.1063/1.4917567

Author Information

Name

Institution

Cankiri Karatekin University

Bilkent University

Bilkent University

Bilkent University

Films

Deposition Temperature = 200C

75-24-1

7664-41-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

GIXRD, Grazing Incidence X-Ray Diffraction

PANalytical Xpert PRO MRD X-ray Diffractometer

Current Density

I-V, Current-Voltage Measurements

Keithley 4200-SCS

Dielectric Constant, Permittivity

C-V, Capacitance-Voltage Measurements

Keithley 4200-SCS

Flat Band Voltage

C-V, Capacitance-Voltage Measurements

Keithley 4200-SCS

Effective Charge Density

C-V, Capacitance-Voltage Measurements

Keithley 4200-SCS

Threshold Voltage

C-V, Capacitance-Voltage Measurements

Keithley 4200-SCS

Thickness

Ellipsometry

J.A. Woollam VASE

Refractive Index

Ellipsometry

J.A. Woollam VASE

Chemical Composition, Impurities

XPS, X-ray Photoelectron Spectroscopy

Thermo Scientific K-Alpha

Unknown

XRR, X-Ray Reflectivity

PANalytical Xpert PRO MRD X-ray Diffractometer

Substrates

Si(100)

Keywords

Notes

315

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