Publication Information

Title: Temperature dependence of silicon nitride deposited by remote plasma atomic layer deposition

Type: Journal

Info: physica status solidi (a) Volume 211, Issue 9, pages 2166-2171, September 2014

Date: 2014-05-08

DOI: http://dx.doi.org/10.1002/pssa.201431162

Author Information

Name

Institution

Hanyang University

Films

Plasma SiNx using Custom ICP

Deposition Temperature Range = 50-400C

13862-16-3

7664-41-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Substrates

Keywords

Notes

235

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